參數(shù)資料
型號(hào): 29F022T-90
廠商: Macronix International Co., Ltd.
英文描述: 2M-BIT[256K x 8]CMOS FLASH MEMORY
中文描述: 200萬(wàn)位[256K × 8]的CMOS閃存
文件頁(yè)數(shù): 20/46頁(yè)
文件大小: 606K
代理商: 29F022T-90
20
P/N:PM0556
REV. 1.3, NOV. 11, 2002
MX29F022/022NT/B
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
DC CHARACTERISTICS TA = 0
o
C to 70
o
C, VCC = 5V
±
10%(VCC = 5V
±
5% for 29F022/022N-55)
SYMBOL
ICC1 (Read)
ICC2
ICC3 (Program)
ICC4 (Erase)
ICCES
PARAMETER
Operating VCC Current
MIN.
TYP MAX. UNIT CONDITIONS
30
mA
50
mA
50
mA
50
mA
2
mA
IOUT=0mA, f=5MHz
IOUT=0mA, F=10MHz
In Programming
In Erase
CE=VIH, Erase Suspended
VCC Erase Suspend Current
NOTES:
1. VIL min. = -0.6V for pulse width is equal to or less than 20ns.
2. If VIH is over the specified maximum value, programming operation cannot be guaranteed.
3. ICCES is specified with the device de-selected. If the device is read during erase suspend mode, current draw is
the sum of ICCES and ICC1 or ICC2.
4. All current are in RMS unless otherwise noted.
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