參數(shù)資料
型號: 29F080-70
廠商: Macronix International Co., Ltd.
英文描述: 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY
中文描述: 800萬位[1024K × 8]的CMOS平等部門閃存
文件頁數(shù): 15/38頁
文件大?。?/td> 678K
代理商: 29F080-70
15
P/N:PM0579
REV. 1.6, NOV. 21, 2002
MX29F080
ABSOLUTE MAXIMUM RATINGS
RATING
Ambient Operating Temperature
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
A9 & OE
VALUE
0
o
C to 70
o
C
-65
o
C to 125
o
C
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 13.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended period may affect reliability.
NOTICE:
Specifications contained within the following tables are subject to
change.
READ TIMING WAVEFORMS
NOTES:
1. VIL min. = -0.6V for pulse width is equal to or less than 20ns.
2. If VIH is over the specified maximum value, programming
operation cannot be guranteed.
3. ICCES is specified with the device de-selected. If the
device is read during erase suspend mode, current draw
is the sum of ICCES and ICC1 or ICC2.
4. All current are in RMS unless otherwise noted.
DC CHARACTERISTICS (TA = 0
o
C to 70
o
C, VCC = 5V
±
10%)
SYMBOL
ICC1 (Read)
ICC2
ICC3 (Program)
ICC4 (Erase)
ICCES
PARAMETER
Operating VCC Current
MIN.
TYP
MAX.
30
50
50
50
UNIT
mA
mA
mA
mA
mA
CONDITIONS
IOUT=0mA, f=1MHz
IOUT=0mA, F=10MHz
In Programming
In Erase
CE=VIH, Erase Suspended
VCC Erase Suspend Current
2
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
Addresses
CE
OE
tACC
WE
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
HIGH Z
HIGH Z
DATA Valid
tOE
tDF
tCE
Outputs
tOH
ADD Valid
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