參數(shù)資料
型號(hào): 29F1610A-90
廠商: Macronix International Co., Ltd.
元件分類(lèi): EEPROM
英文描述: The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
中文描述: 該CAT24FC02是一個(gè)2 KB的EEPROM的國(guó)內(nèi)256個(gè)8位每字舉辦的串行CMOS
文件頁(yè)數(shù): 21/39頁(yè)
文件大小: 669K
代理商: 29F1610A-90
21
P/N: PM0506
REV.1.7, JUN. 15, 2001
MX29F1610A
29F1610A-90
MIN.
29F1610A-10
MIN.
29F1610A-12
MIN.
SYMBOL
DESCRIPTIONS
MAX.
MAX.
MAX.
UNIT
CONDITIONS
tACC
Address to Output Delay
90
100
120
ns
CE=OE=VIL
tCE
CE to Output Delay
90
100
120
ns
OE=VIL
tOE
OE to Output Delay
50
55
60
ns
CE=VIL
tDF
OE High to Output Delay
0
35
0
55
0
55
ns
CE=VIL
tOH
Address to Output hold
0
0
0
ns
CE=OE=VIL
tBACC
BYTE to Output Delay
90
100
120
ns
CE= OE=VIL
tBHZ
BYTE Low to Output in High Z
50
55
55
ns
CE=VIL
tDPR
Deep Power-Down Recovery
0
0
0
ns
DC CHARACTERISTICS
= 0
°
C to 70
°
C, VCC = 5V
±
10%(CONTINUE P.21)
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0V, T = 25
°
C. These currents are valid for all product
versions (package and speeds).
2. ICC3 is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of ICC3
and ICC1/2.
3. VIL min. = -1.0V for pulse width is equal to or less than 50ns.
VIL min. = -2.0V for pulse width is equal to or less than 20ns.
4. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20ns. If VIH is over the specified maximum value, read operation
cannot be guaranteed.
AC CHARACTERISTICS
READ OPERATIONS
TEST CONDITIONS:
Input pulse levels: 0.45V/2.4V
Input rise and fall times: 10ns
Output load: 1TTL gate+100pF(Including scope and jig)
Reference levels for measuring timing: 0.8V, 2.0V
NOTE:
1. tDF is defined as the time at which the output achieves the
open circuit condition and data is no longer driven.
相關(guān)PDF資料
PDF描述
29F200C-55 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
29F200C-70 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
29F200C-90 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
29F256 262,144-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
29F4000 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F200 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
29F200BB-70EI 制造商:undefined 功能描述:
29F200BT70SC 制造商:undefined 功能描述:
29F200BT-70SC 制造商:undefined 功能描述:
29F200BTC70 制造商:MX 功能描述:NEW