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參數(shù)資料
| 型號： | 29F200C-90 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY |
| 中文描述： | 200萬位[256Kx8/128Kx16]的CMOS閃存 |
| 文件頁數(shù)： | 1/44頁 |
| 文件大?。?/td> | 447K |
| 代理商： | 29F200C-90 |
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- Superior inadvertent write protection
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors
Sector protect/chip unprotect for 5V only system
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Boot Code Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
Low VCC write inhibit is equal to or less than 3.2V
Erase suspend/ Erase Resume
- Suspends an erase operation to read data from, or
program data to a sector that is not being erased, then
resume the erase operation.
Hardware reset pin
- Resets internal state mechine to the read mode
20 years data retention
Package type:
- 44-pin SOP
- 48-pin TSOP
-
All Pb-free devices are RoHS Compliant
GENERAL DESCRIPTION
The MX29F200C T/B is a 2-mega bit, single 5 Volt Flash
memory organized as 1M word x16 or 2M bytex8 MXIC's
Flash memories offer the most cost-effective and reli-
able read/write non-volatile random access memory.
The MX29F200C T/B is packaged in 44-pin SOP and 48-
pin TSOP. It is designed to be reprogrammed and
erased in-system or in-standard EPROM programmers.
The standard MX29F200C T/B offers access time as fast
as 55ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention, the
MX29F200C T/B has separate chip enable (CE#) and
output enable (OE# ) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F200C T/B uses a command register to manage
this functionality. The command register allows for 100%
FEATURES
5.0V±10% for read, erase and write operation
131072x16/262144x8 switchable
Fast access time: 55/70/90ns
Compatible with MX29F200T/B device
Low power consumption
- 40mA maximum active current@5MHz
- 1uA typical standby current
Command register architecture
- Byte/Word Programming (9us/11us typical)
- Sector Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1,
and 64K-Byte x3)
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors or
the whole chip with Erase Suspend capability.
- Automatically program and verify data at specified
address
Status Reply
- Data# Polling & Toggle bit for detection of program
and erase cycle completion.
Ready/Busy# pin(RY/BY#)
- Provides a hardware method or detecting program
or erase cycle completion
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields for
erase and programming operations produces reliable
cycling. The MX29F200C T/B uses a 5.0V
±
10% VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
1
P/N:PM1250
REV. 1.0, DEC. 14, 2005
MX29F200C T/B
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
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