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參數(shù)資料
| 型號： | 29F400B-90TC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 中文描述： | 4MEGABIT（為512k × 8 / 256K × 16）5VOLT扇區(qū)擦除的CMOS閃存 |
| 文件頁數(shù)： | 2/38頁 |
| 文件大?。?/td> | 240K |
| 代理商： | 29F400B-90TC |
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BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
- 2 -
machine is operating will be erroneous. Thus, these address locations will need rewriting after the
device is reset.
FEATURES
5.0 V +/- 10% Program and Erase
Minimizes system-level power requirements
High performance
90 nS access time
Compatible with JEDEC-standard Commands
Uses software commands, pinouts, and
packages following industry standards for
single power supply Flash memory
Typically 100,000 Program/Erase Cycles
Sector Erase Architecture
One 16 Kbytes, two 8 Kbytes, one 32 Kbytes,
and seven 64 Kbytes
Any combination of sectors can be erased
concurrently; also supports full chip erase
Erase Suspend/Resume
Suspend a sector erase operation to allow a
data read in a sector not being erased within
the same device
Ready/Busy
RY/BY output pin for detection of
programming or erase cycle completion
RESET
Hardware pin resets the internal state
machine to the read mode
Internal Erase Algorithms
Automatically erases a sector, any
combination of sectors, or the entire
chip
Internal Programming Algorithms
Automatically programs and verifies data at a
specified address
Low Power Consumption
20 mA typical active read current for Byte
Mode
28 mA typical active read current for Word
Mode
30 mA typical write/erase current
Sector Protection
Hardware method disables any combination
of sectors from a program or erase operation
Boot Code Sector Architecture
FAMILY PART NO.
-90
-120
-150
Maximum Access Time (nS)
90
120
150
CE
(E) Access time (nS)
90
120
150
OE
(G) Access time (nS)
35
50
60
*This speed is available with Vcc = 5V +/- 5% variation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 29F400B-90TI | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400T-12PC | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400T-12PI | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400T-12TC | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400T-12TI | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F400B-90TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400BB | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29F400BT-70EC | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29F400BT-70SC | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29F400C-55 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY |
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