參數資料
型號: 29F400B-90TC
廠商: Electronic Theatre Controls, Inc.
英文描述: 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述: 4MEGABIT(為512k × 8 / 256K × 16)5VOLT扇區(qū)擦除的CMOS閃存
文件頁數: 25/38頁
文件大?。?/td> 240K
代理商: 29F400B-90TC
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
A Winbond Company
Publication Release Date: May 1999
- 25 -
Revision A1
AC CHARACTERISTICS
Programming/Erase Operations
PARAMETER
SYM.
DESCRIPTION
-90
-120
-150
UNIT
JEDEC
Standard
tAVAV
tWC
Write Cycle Time(1)
Min.
90
120
150
nS
tAVWL
tAS
Address Setup Time
Min.
0
0
0
nS
tWLAX
tAH
Address Hold Time
Min.
45
50
50
nS
tDVWH
tDS
Data Setup Time
Min.
45
50
50
nS
tWHDX
tDH
Data Hold Time
Min.
0
0
0
nS
tOES
Output Enable Setup Time
Min.
0
0
0
nS
tOEH
Output Enable
Read(1)
Min.
0
0
0
nS
Hold Time
Toggle &
Data
Polling(1)
Min.
10
10
10
nS
tGHWL
tGHWL
Read Recover Time Before Write
Min.
0
0
0
nS
tELWL
tCS
CE
Setup Time
Min.
0
0
0
nS
tWHEH
tCH
CE
Hold Time
Min.
0
0
0
nS
tWLWH
tWP
Write Pulse Width
Min.
45
50
50
nS
tWHWL
tWPH
Write Pulse Width High
Min.
20
20
20
nS
tWHWH1
tWHWH1
Byte Programming Operation
Typ.
Max.
16
400
16
400
16
400
uS
uS
tWHWH2
tWHWH2
Sector Erase Operation(2)
Typ. Max.
0.26
12
0.26
12
0.26
12
sec
tWHWH3
tWHWH3
Chip Erase Operation(2)
Typ.
Max.
2.0
90
2.0
90
2.0
90
sec
tVCS
Vcc Setup Time(1)
Min.
50
50
50
mS
tVIDR
Rise Time to VID(1,3)
Min.
500
500
500
nS
tOESP
OE
Setup Time to
WE
Active(1, 3, 4)
Min.
4
4
4
mS
tRP
RESET
Pulse Width
Min.
500
500
500
nS
tRSP
RESET
Setup Time( 3)
Min.
4
4
4
uS
tBUSY
Programming/Erase Valid to RY/BY Delay(1)
Min.
40
50
60
nS
tVLHT
Voltage Transition Time(1, 4)
Min.
4
4
4
mS
tWPP1
Sector Protect Write Pulse Width(4)
Min.
100
100
100
mS
tWPP2
Sector Unprotect Write Pulse Width(4)
Min.
350
350
350
mS
tCSP
CE
Setup Time to
WE
Active(1, 4)
Min.
4
4
4
nS
Notes:
1. Not 100% tested.
2. Does not include pre-programming time.
3. This timing is for Temporary Sector Unprotect operation.
These timings are for Sector Protect and/or Sector Unprotect operations.
相關PDF資料
PDF描述
29F400B-90TI 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12PC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12PI 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12TC 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12TI 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
相關代理商/技術參數
參數描述
29F400B-90TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400BB 制造商: 功能描述: 制造商:undefined 功能描述:
29F400BT-70EC 制造商: 功能描述: 制造商:undefined 功能描述:
29F400BT-70SC 制造商: 功能描述: 制造商:undefined 功能描述:
29F400C-55 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY