參數(shù)資料
型號(hào): 29F400C-70
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
中文描述: 4分位[512Kx8/256Kx16]電壓5V的CMOS單只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 13/42頁(yè)
文件大?。?/td> 454K
代理商: 29F400C-70
13
P/N:PM1200
MX29F400C T/B
REV. 1.0, DEC. 20, 2005
operation is completed as indicated by Data# Polling or
Toggle Bit. If Q3 is low ("0"), the device will accept addi-
tional sector erase commands. To insure the command
has been accepted, the system software should check
the status of Q3 prior to and following each subsequent
sector erase command. If Q3 were high on the second
status check, the command may not have been accepted.
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns(typical) on CE# or WE#
will not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE# = VIL,
CE# = VIH or WE# = VIH. To initiate a write cycle CE#
and WE# must be a logical zero while OE# is a logical
one.
POWER SUPPLY DECOUPLING
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected be-
tween its VCC and GND.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F400C-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
29F400T-12PC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12PI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY