參數(shù)資料
型號(hào): 29F400C-70
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
中文描述: 4分位[512Kx8/256Kx16]電壓5V的CMOS單只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 20/42頁
文件大?。?/td> 454K
代理商: 29F400C-70
20
P/N:PM1200
MX29F400C T/B
REV. 1.0, DEC. 20, 2005
READ TIMING WAVEFORMS
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
Notes:
1. VIL min. = -0.6V for pulse width is equal to or less than 20ns.
2. If VIH is over the specified maximum value, programming operation cannot be guaranteed.
3. ICCES is specified with the device de-selected. If the device is read during erase suspend mode, current draw is
the sum of ICCES and ICC1 or ICC2.
4. All current are in RMS unless otherwise noted.
5. The Automotive grade is under development.
DC CHARACTERISTICS
TA = -40
o
C to 85
o
C, VCC = 5V
±
10%
SYMBOL
ICC1 (Read)
ICC2
ICC3 (Program)
ICC4 (Erase)
ICCES
PARAMETER
Operating VCC Current
MIN.
TYP
MAX.
40
50
50
50
UNIT
mA
mA
mA
mA
mA
CONDITIONS
IOUT=0mA, f=5MHz
IOUT=0mA, f=10MHz
In Programming
In Erase
CE#=VIH, Erase Suspended
VCC Erase Suspend Current
2
Addresses
CE#
OE#
tACC
WE#
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
HIGH Z
HIGH Z
DATA Valid
tOE
tDF
tCE
Outputs
tOH
ADD Valid
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29F400T-12PI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-12TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
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