參數(shù)資料
型號(hào): 29F400C-70
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
中文描述: 4分位[512Kx8/256Kx16]電壓5V的CMOS單只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 19/42頁(yè)
文件大?。?/td> 454K
代理商: 29F400C-70
19
P/N:PM1200
MX29F400C T/B
REV. 1.0, DEC. 20, 2005
AC CHARACTERISTICS
TA = -40
o
C to 85
o
C, VCC = 5V
±
10%
Notes:
1. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.
2. Automotive grade is under development.
29F400C-55
29F400C-70
29F400C-90
SYMBOL
PARAMETER
MIN.
MAX.
MIN.
MAX.
MIN. MAX.
UNIT
Conditions
tACC
Address to Output Delay
55
70
90
ns
CE#=OE#=VIL
tCE
CE# to Output Delay
55
70
90
ns
OE#=VIL
tOE
OE# to Output Delay
30
30
35
ns
CE#=VIL
tDF
OE# High to Output Float
0
20
0
20
0
20
ns
CE#=VIL
(Note 1)
tOH
Address to Output hold
0
0
0
ns
CE#=OE#=VIL
TEST CONDITIONS:
Input pulse levels: 0.45V/0.7xVCC for 70ns & 90ns,
0V/0.7xVCC for 55ns
Input rise and fall times: is equal to or less than 10ns
for 70ns & 90ns, 5ns for 55ns
Output load: 1 TTL gate + 100pF (Including scope and
jig) for 70ns & 90ns, 1TTLgate+30pF for 55ns max.
Reference levels for measuring timing: 0.8V, 2.0V for
70ns & 90ns,1.5V for 55ns
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29F400T-12TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
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