- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371439 > 29F400T-90PC (Electronic Theatre Controls, Inc.) 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | 29F400T-90PC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 中文描述： | 4MEGABIT（為512k × 8 / 256K × 16）5VOLT扇區(qū)擦除的CMOS閃存 |
| 文件頁數(shù)： | 11/38頁 |
| 文件大?。?/td> | 240K |
| 代理商： | 29F400T-90PC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當(dāng)前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
A Winbond Company
Publication Release Date: May 1999
- 11 -
Revision A1
command must be less than 80 mS to guarantee acceptance of the command by the internal state
machine. The time-out window can be monitored via the write operation status pin DQ3 (refer to the
Write Operation Status section for Sector Erase Timer operation). It is recommended that CPU
interrupts be disabled during this time to ensure that the subsequent Sector Erase commands can be
initiated within the 100 uS window. The interrupts can be re-enabled after the last Sector Erase
command is written. As mentioned above, an internal device timer will initiate the Sector Erase
operation 100 uS
±
20% (80 uS to 120 uS) from the rising edge of the last
WE
pulse. Sector Erase
Timer Write Operation Status pin (DQ3) can be used to monitor time out window. If another falling
edge of the
WE
occurs within the 100 mS time-out window, the internal device timer is reset.
Loading the sector erase buffer may be done in any sequence and with any number of sectors.
Any command other than Sector Erase or Erase Suspend during this period and afterwards will
RESET
the device to read mode, ignoring the previous command string. Resetting the device with a
hardware
RESET
after it has begun execution of a Sector Erase operation will result in the data in
the operated sectors being undefined and may be unrecoverable. In this case, restart the Sector
Erase operation on those sectors and attempt to allow them to complete the Erase operation.
Command Definitions
Device operations are selected by writing specific address and data sequences in to the Command
register. Writing incorrect addresses and data values or writing them in the improper sequence will
RESET
the device to Read mode. Table 5 defines the valid register command sequences. Either of
the two Read/Reset commands will
RESET
the device (when applicable).
During Sector Erase operation, data bit DQ7 shows a logical "0". This operation is known as Data
Polling. Sector Erase operation is complete when data on DQ7 is a logical "1" (see Write Operation
Status section) at which time the device returns to read mode. At this time, the address pins are no
longer latched. Note that Data Polling must be performed at a sector address within any of the
sectors being erased and not a protected sector to ensure that DQ7 returns a logical "1" upon
completion of the Sector Erase operation.
Figure 2 illustrates the Sector Erase Algorithm using typical command strings and bus operations.
During execution of the Sector Erase command, only the Erase Suspend and Erase Resume
commands are allowed. All other commands will
RESET
the device to read mode.
Note: Do not attempt to write an invalid command sequence during the sector erase operation. Doing so will terminate the sector
erase operation and the device will /RESET to the read mode.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 29F400T-90PI | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400T-90TC | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400T-90TI | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-12PC | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400C-55 | 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F400T-90PI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400T-90TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400T-90TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F516S050B | 制造商:Micro Plastics Inc 功能描述: |
| 29F519G4 | 制造商: 功能描述: 制造商:undefined 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。