參數(shù)資料
型號(hào): 29F400T-90PC
廠商: Electronic Theatre Controls, Inc.
英文描述: 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述: 4MEGABIT(為512k × 8 / 256K × 16)5VOLT扇區(qū)擦除的CMOS閃存
文件頁(yè)數(shù): 33/38頁(yè)
文件大?。?/td> 240K
代理商: 29F400T-90PC
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
A Winbond Company
Publication Release Date: May 1999
- 33 -
Revision A1
Switching Waveforms, continued
WC
t
AH
t
AS
t
GHWL
t
WP
t
WHWH1
t
CS
t
WPH
t
D
H
t
DS
t
5555H
PA
PA
Data Polling
D
DQ7
PD
A0H
Address
CE
OE
WE
Data
5.0V
Vcc
GND
OUT
Figure 19. Alternate CE Controlled Program Operation Timings
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at BYTE address.
3. /DQ7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
6. These waveforms are for the x16 mode.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F400T-90PI 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-90TC 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
29F400T-90TI 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
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