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參數(shù)資料
| 型號： | 2N3741A |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | Medium Power PNP Transistors |
| 中文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2N3741A |
MSC1042.PDF 03-12-99
2N3741A
ELECTRICAL CHARACTERISTICS:
(25
°
Case Temperature Unless Otherwise Noted)
VALUE
Min.
80
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Max.
----
Units
V
CEO(sus)*
Collector-Emitter
Sustaining Voltage
Emitter Base Cutoff
Current
Collector Cutoff Current
I
C
= 100 mAdc, I
B
= 0 (Note 1)
Vdc
I
EB0*
V
EB
= 7.0 Vdc
----
100
nAdc
I
CEX*
V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc
V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150
°
C
V
CE
= 60 Vdc, I
B
= 0
----
----
----
100
0.5
1.0
nAdc
mAdc
μ
Adc
I
CEO
*
Collector-Emitter Cutoff
Current
Collector Base Cutoff
Current
DC Current Gain
(Note 1)
I
CBO*
V
CB
= 80 Vdc, I
E
= 0
----
100
nAdc
h
FE
*
I
C
= 100 mAdc, V
CE
= 1.0 Vdc
I
C
= 250 mAdc, V
CE
= 1.0 Vdc
I
C
= 500 mAdc, V
CE
= 1.0 Vdc
I
C
= 1.0 Adc, V
CE
= 1.0 Vdc
I
C
= 1.0 Adc, I
B
= 125 mAdc
40
30
20
10
----
----
100
----
----
0.6
----
----
----
----
Vdc
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
(Note 1)
Base-Emitter Voltage
(Note 1)
V
BE*
I
C
= 250 mAdc, V
CE
= 1.0 Vdc
----
1.0
Vdc
f
T
*
Current Gain Bandwidth
Product
Small-Signal Current
Gain
Common Base Output
Capacitance
I
C
= 100 mAdc, V
CE
= 10 Vdc, f = 1.0 MHz
3.0
----
MHz
h
fe
*
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
25
----
----
C
ob*
V
CB
= 10 Vdc, I
C
= 0, f = 100 kHz
----
100
pF
Note 1: Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2.0%
* Indicates JEDEC registered data.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3741JANTX | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR TO-66 LAW |
| 2N3741R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| 2N3741SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:MEDIUM POWER PNP SILICON POWER TRANSISTOR |
| 2N3742 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN TO-39/TO-5 |
| 2N3743 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 0.2A 3PIN TO-39 - Bulk |
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