參數(shù)資料
型號(hào)： 2N3771
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： High Power NPN Silicon Power Transistor(30A,40V（集電極-發(fā)射極）,150W，硅NPN大功率晶體管)
中文描述： 30 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝： CASE 1-07, TO-3, 2 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 140K
代理商： 2N3771
High Power NPN Silicon Power
Transistors
. . . designed for linear amplifiers, series pass regulators, and
inductive switching applications.
Forward Biased Second Breakdown Current Capability
I
S/b
= 3.75 Adc @ V
CE
= 40 Vdc — 2N3771
= 2.5 Adc @ V
CE
= 60 Vdc — 2N3772
These devices are available in Pb
free package(s). Specifications herein
apply to both standard and Pb
free devices. Please see our website at
www.onsemi.com for specific Pb
free orderable part numbers, or
150
Collector
Emitter Voltage
V
CEO
40
60
Vdc
Collector
Emitter Voltage
V
CEX
50
80
Vdc
Collector
Base Voltage
V
50
100
Vdc
Peak
30
30
Base Current — Continuous
Watts
Total Device Dissipation @ T
C
= 25 C
P
J
stg
Characteristics
Symbol
2N3771, 2N3772
Unit
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
θ
JC
1.17
C/W
ON Semiconductor
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 10
1
Publication Order Number:
2N3771/D
2N3771
2N3772
*ON Semiconductor Preferred Device
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS
150 WATTS
*
CASE 1
07
TO
204AA
(TO
3)
相關(guān)PDF資料
PDF描述
2N3772 High Power NPN Silicon Power Transistor(20A,60（集電極-發(fā)射極）V,150W，硅NPN大功率晶體管)
2N3773 Complementary Silicon Power Transistor(16A,140V（集電極-發(fā)射極）,150W，補(bǔ)償型，硅NPN功率晶體管)
2N3821 TECHNICAL DATA
2N3822 TECHNICAL DATA
2N3821 N-Channel Silicon Junction Field-Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N3771 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3
2N3771/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Power NPN Silicon Power Transistors
2N3771_00 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH POWER NPN SILICON TRANSISTOR
2N3771_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Power NPN Silicon Power Transistors
2N3771G 功能描述:兩極晶體管 - BJT 30A 40V 150W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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