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參數(shù)資料
| 型號(hào)： | 2N3772 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Power NPN Silicon Power Transistor(20A,60（集電極-發(fā)射極）V,150W，硅NPN大功率晶體管) |
| 中文描述： | 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 93K |
| 代理商： | 2N3772 |
High Power NPN Silicon Power
Transistors
. . . designed for linear amplifiers, series pass regulators, and
inductive switching applications.
Forward Biased Second Breakdown Current Capability
I
S/b
= 3.75 Adc @ V
CE
= 40 Vdc — 2N3771
= 2.5 Adc @ V
= 60 Vdc — 2N3772
*Indicates JEDEC Registered Data.
0.855
CEO
CEX
Emitter–Base Voltage
Collector Current — Continuous
V
EB
I
Collector–Base Voltage
5.0
30
30
V
CB
7.0
20
30
50
Vdc
Adc
W/ C
100
Vdc
Peak
Base Current — Continuous
I
B
7.5
5.0
Adc
Derate above 25 C
C
D
Watts
Temperature Range
Thermal Resistance, Junction to Case
JC
1.17
C/W
200
00
25
50
75
100
125
150
175
200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (
°
C)
150
100
50
P 125
75
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 8
1
Publication Order Number:
2N3771/D
2N3771
2N3772
*ON Semiconductor Preferred Device
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS
150 WATTS
*
CASE 1–07
TO–204AA
(TO–3)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3773 | Complementary Silicon Power Transistor(16A,140V（集電極-發(fā)射極）,150W，補(bǔ)償型，硅NPN功率晶體管) |
| 2N3821 | TECHNICAL DATA |
| 2N3822 | TECHNICAL DATA |
| 2N3821 | N-Channel Silicon Junction Field-Effect Transistor |
| 2N3822 | surface mount silicon Zener diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3772 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N3772_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON NPN TRANSISTORS |
| 2N37729050 | 制造商:n/a 功能描述:2N3772 |
| 2N3772G | 功能描述:兩極晶體管 - BJT 20A 60V 150W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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