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參數(shù)資料
| 型號(hào)： | 2N3771 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Power NPN Silicon Power Transistor(30A,40V（集電極-發(fā)射極）,150W，硅NPN大功率晶體管) |
| 中文描述： | 30 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | 2N3771 |
2N3771 2N3772
http://onsemi.com
4
Figure 2. Thermal Response — 2N3771, 2N3772
t, TIME (ms)
1.0
0.7
0.5
0.010.02
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
r
R
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
2000
θ
JC
(t) = r(t)
θ
JC
θ
JC
= 0.875
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.02
1000
40
1.0
Figure 3. Active
Region Safe Operating Area
— 2N3771, 2N3772
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
30
20
10
2.0
2.0
3.0
5.0
10
30
50
70 100
7.0
I
dc
5.0
7.0
3.0
100
μ
s
1.0 ms
20
2N3771
2N3772, (dc)
40
μ
s
100 ms
500 ms
PULSE CURVES APPLY
FOR ALL DEVICES
2N3771
2N3772
200
μ
s
BONDING WIRE LIMITED
THERMALLY LIMITED
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
T
C
= 25
°
C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Figure 3 is based on JEDEC registered Data. Second
breakdown pulse limits are valid for duty cycles to 10%
provided T
J(pk)
< 200 C. T
J(pk)
may be calculated from the
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, T
J(pk)
will be found to be less than T
J(max)
for pulse widths of 1 ms and less. When using ON
Semiconductor transistors, it is permissible to increase the
pulse power limits until limited by T
J(max)
.
Figure 4. Switching Time Test Circuit
+11 V
25
μ
s
0
9.0 V
R
B
4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
MSD6100 USED BELOW I
B
≈
100 mA
B
≈
100 mA
R
B
AND R
C
ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
10
0.3
Figure 5. Turn
On Time
I
C
, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
0.1
0.01
0.5 0.7
1.0
2.0
5.0 7.0
30
V
CC
= 30
I
C
/I
B
= 10
T
J
= 25
°
C
0.05
t
t
d
t
r
3.0
0.02
10
20
V
BE(off)
= 5.0 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3772 | High Power NPN Silicon Power Transistor(20A,60（集電極-發(fā)射極）V,150W，硅NPN大功率晶體管) |
| 2N3773 | Complementary Silicon Power Transistor(16A,140V（集電極-發(fā)射極）,150W，補(bǔ)償型，硅NPN功率晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3771 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N3771/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Power NPN Silicon Power Transistors |
| 2N3771_00 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH POWER NPN SILICON TRANSISTOR |
| 2N3771_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Power NPN Silicon Power Transistors |
| 2N3771G | 功能描述:兩極晶體管 - BJT 30A 40V 150W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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