參數(shù)資料
型號: 2N3772
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: High Power NPN Silicon Power Transistor(20A,60(集電極-發(fā)射極)V,150W,硅NPN大功率晶體管)
中文描述: 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝: CASE 1-07, TO-3, 2 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 93K
代理商: 2N3772
2N3771 2N3772
http://onsemi.com
2
*Indicates JEDEC Registered Data.
(1) Pulse Test: 300
μ
s, Rep. Rate 60 cps.
OFF CHARACTERISTICS
*Collector–Emitter Sustaining Voltage (1)
C
B
2N3771
V
40
Vdc
Collector–Emitter Sustaining Voltage
2N3771
70
V
CEX(sus)
50
Vdc
(I
C
= 0.2 Adc, R
BE
= 100 Ohms)
2N3772
V
Vdc
(V
CE
= 25 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
2N3771
I
CEO
10
mAdc
(V
CE
= 45 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150 C)
(V
= 100 Vdc, I
= 0)
*Collector Cutoff Current
(V
CE
= 50 Vdc, V
EB(off)
= 1.5 Vdc)
(V
= 45 Vdc, V
= 1.5 Vdc)
CE
EB(off)
C
2N3771
2N6257
I
CEV
2.0
10
mAdc
*Collector Cutoff Current
CB
E
2N3772
I
CBO
5.0
5.0
2.0
mAdc
(V
BE
= 5.0 Vdc, I
C
= 0)
(V
BE
= 7.0 Vdc, I
C
= 0)
2N3771
2N3772
mAdc
*ON CHARACTERISTICS
(I
C
= 20 Adc, V
CE
= 4.0 Vdc)
f
T
DC Current Gain (1)
(I
= 10 Adc, V
= 4.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc)
2N3772
2N3772
0.2
h
FE
5.0
4.0
MHz
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc)
*DYNAMIC CHARACTERISTICS
C
CE
test
(I
C
= 15 Adc, I
B
= 1.5 Adc)
C
B
(I
C
= 20 Adc, I
B
= 4.0 Adc)
2N3771
2N3772
V
2.0
1.4
Vdc
Base–Emitter On Voltage
C
CE
V
2.7
Vdc
Current–Gain — Bandwidth Product
(I
= 1.0 Adc, V
= 4.0 Vdc, f = 1.0 kHz)
fe
CE
(V
CE
= 40 Vdc)
2N3771
3.75
相關(guān)PDF資料
PDF描述
2N3773 Complementary Silicon Power Transistor(16A,140V(集電極-發(fā)射極),150W,補(bǔ)償型,硅NPN功率晶體管)
2N3821 TECHNICAL DATA
2N3822 TECHNICAL DATA
2N3821 N-Channel Silicon Junction Field-Effect Transistor
2N3822 surface mount silicon Zener diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N3772 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3
2N3772_12 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON NPN TRANSISTORS
2N37729050 制造商:n/a 功能描述:2N3772
2N3772G 功能描述:兩極晶體管 - BJT 20A 60V 150W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2