- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371457 > 2N3773 (ON SEMICONDUCTOR) Complementary Silicon Power Transistor(16A,140V（集電極-發(fā)射極）,150W，補(bǔ)償型，硅NPN功率晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N3773 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Power Transistor(16A,140V（集電極-發(fā)射極）,150W，補(bǔ)償型，硅NPN功率晶體管) |
| 中文描述： | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | 2N3773 |
NPN 2N3773*, PNP 2N6609
http://onsemi.com
2
3. Pulse Test: Pulse Width = 300 s, Duty Cycle
2%.
4. Indicates JEDEC Registered Data.
OFF CHARACTERISTICS
(Note 3)
C
B
CollectorEmitter Breakdown Voltage (Note 4)
V
140
(I
= 0.1 Adc, V
= 1.5 Vdc, R
= 100 Ohms)
V
(I
C
= 0.2 Adc, R
BE
= 100 Ohms)
(V
CE
= 120 Vdc, I
B
= 0)
(V
= 140 Vdc, V
= 1.5 Vdc, T
= 150 C)
Collector Cutoff Current (Note 4)
CE
BE(off)
I
CEX
10
(V
CB
= 140 Vdc, I
E
= 0)
(V
BE
= 7 Vdc, I
C
= 0)
(I
= 16 Adc, V
= 4 Vdc)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
C
CE
V
BE(on)
h
—
15
60
BaseEmitter On Voltage (Note 4)
C
CE
(I
C
= 16 Adc, I
B
= 3.2 Adc)
CE(sat)
2.2
4
Vdc
DYNAMIC CHARACTERISTICS
(I
= 1 A, f = 50 kHz)
Magnitude of CommonEmitter
|h
fe
|
4
SECOND BREAKDOWN CHARACTERISTICS
t = 1 s (nonrepetitive), V
CE
= 100 V, See Figure 12
(I
C
= 1 Adc, V
CE
= 4 Vdc, f = 1 kHz)
ORDERING INFORMATION
Device
Package
Shipping
2N3773
TO204
100 Unit / Tray
2N3773G
TO204
(PbFree)
100 Unit / Tray
2N6609
TO204
100 Unit / Tray
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3821 | TECHNICAL DATA |
| 2N3822 | TECHNICAL DATA |
| 2N3821 | N-Channel Silicon Junction Field-Effect Transistor |
| 2N3822 | surface mount silicon Zener diodes |
| 2N3823 | N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3773 LEADFREE | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3773 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 |
| 2N3773/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon Power Transistor |
| 2N3773_04 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
| 2N3773_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High power NPN transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。