參數(shù)資料
型號: 2N3773
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary Silicon Power Transistor(16A,140V(集電極-發(fā)射極),150W,補(bǔ)償型,硅NPN功率晶體管)
中文描述: 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝: CASE 1-07, TO-3, 2 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 93K
代理商: 2N3773
NPN 2N3773*, PNP 2N6609
http://onsemi.com
4
30
20
3.0
Figure 7. Forward Bias Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.03
5.0
7.0
10
20
30
50
300
BONDING WIRE LIMIT
THERMAL LIMIT
@ T
C
= 25
°
C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
70
I
dc
10 s
40 s
100 s
200 s
1.0 ms
100 ms
0.1
0.05
100
200
500 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on T
J(pk)
= 200 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 200 C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
100
80
60
40
0
20
0
40
80
120
160
200
Figure 8. Power Derating
T
C
, CASE TEMPERATURE (
°
C)
P
THERMAL
DERATING
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N3773 LEADFREE 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3773 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3
2N3773/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon Power Transistor
2N3773_04 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Transistors
2N3773_08 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High power NPN transistor