參數(shù)資料
型號(hào): 2N4403
廠商: DIOTEC SEMICONDUCTOR AG
元件分類: 小信號(hào)晶體管
英文描述: Si-Epitaxial PlanarTransistors
中文描述: 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 1/2頁
文件大小: 97K
代理商: 2N4403
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
36
2N4402, 2N4403
General Purpose Transistors
PNP
Si-Epitaxial
PlanarTransistors
PNP
Version 2004-01-20
Power dissipation – Verlustleistung
625 mW
Plastic case
Kunststoffgehuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25°C)
Grenzwerte
(T
A
= 25°C)
2N4402, 2N4403
40 V
Collector-Emitter-voltage
B open
- V
CE0
- V
CE0
- V
EB0
P
tot
- I
C
T
j
T
S
Collector-Base-voltage
E open
40 V
Emitter-Base-voltage
C open
5 V
Power dissipation – Verlustleistung
625 mW
1
)
Collector current – Kollektorstrom (dc)
600 mA
Junction temp. – Sperrschichttemperatur
150°C
Storage temperature – Lagerungstemperatur
- 55…+ 150°C
Characteristics (T
j
= 25°C)
Kennwerte (T
j
= 25°C)
Typ.
Min.
Max.
Collector saturation volt. – Kollektor-Sttigungsspannung
- I
C
= 150 mA, - I
B
= 15 mA
- I
C
= 500 mA, - I
B
= 50 mA
Base saturation voltage – Basis-Sttigungsspannung
- V
CEsat
- V
CEsat
400 mV
750 mV
- I
C
= 150 mA, - I
B
= 15 mA
- I
C
= 500 mA, - I
B
= 50 mA
Collector cutoff current – Kollektorreststrom
- V
BEsat
- V
BEsat
750 mV
950 mV
1.3 V
- V
CE
= 35 V, - V
EB
= 0.4 V
Emitter cutoff current – Emitterreststrom
- I
CBV
100 nA
- V
CE
= 35 V, - V
EB
= 0.4 V
- I
EBV
100 nA
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