- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371459 > 2N4410 (ON SEMICONDUCTOR) NPN Silicon Amplifer Transistor(80V（集電極-發(fā)射極）硅NPN放大器晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N4410 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | NPN Silicon Amplifer Transistor(80V（集電極-發(fā)射極）硅NPN放大器晶體管) |
| 中文描述： | 250 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | 2N4410 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
80
Vdc
Collector–Base Voltage
120
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
250
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
80
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 500
μ
Adc, VBE = 5.0 Vdc, RBE = 8.2 k ohms)
V(BR)CEX
120
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10
μ
Adc, IE = 0)
V(BR)CBO
120
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10
μ
Adc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100
°
C)
ICBO
—
—
0.01
1.0
μ
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
—
0.1
μ
Adc
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
Order this document
by 2N4410/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
REV 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4410 | NPN General Purpose Amplifier(NPN型通用放大器) |
| 2N4441 | SILICON CONTROLLED RECTIFIERS |
| 2N4442 | SILICON CONTROLLED RECTIFIERS |
| 2N4443 | SILICON CONTROLLED RECTIFIERS |
| 2N4444 | SILICON CONTROLLED RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4410 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| 2N4410/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Amplifier Transistor NPN |
| 2N4410_01 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| 2N4410_D26Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4410_D27Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。