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參數(shù)資料
| 型號(hào)： | 2N4410 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN Silicon Amplifer Transistor(80V（集電極-發(fā)射極）硅NPN放大器晶體管) |
| 中文描述： | 250 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 183K |
| 代理商： | 2N4410 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
hFE
60
60
—
400
—
Collector–Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
VCE(sat)
—
0.2
Vdc
Base–Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 0.1 mAdc)
VBE(sat)
—
0.8
Vdc
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
VBE(on)
—
0.8
Vdc
fT
60
300
MHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded)
Ccb
—
12
pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded)
Ceb
—
50
pF
2. fT = |hfe|
ftest.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
500
h
F
TJ = 125
°
C
–55
°
C
25
°
C
5.0
10
7.0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
30
20
300
100
50
VCE = 1.0 V
VCE = 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
0.9
IC = 1.0 mA
0
0.005
0.3
0.01
0.2
0.5
1.0
2.0
20
0.8
0.5
0.4
0.7
0.6
0.2
0.02
0.05
0.1
10
V
0.1
10 mA
30 mA
100 mA
5.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4410 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| 2N4410/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Amplifier Transistor NPN |
| 2N4410_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| 2N4410_D26Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4410_D27Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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