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參數(shù)資料
| 型號(hào)： | 2N5551 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN General Purpose Amplifier(NPN型通用放大器) |
| 中文描述： | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 500K |
| 代理商： | 2N5551 |
2
Electrical Characteristics
TA = 25
°
C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Sustaining Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
Symbol
Parameter
Test Conditions
Min
Max
Units
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 120 V, I
E
= 0,
V
CB
= 120 V, I
E
= 0, T
A
= 100
°
C
V
EB
= 4.0 V, I
C
= 0
160
180
6.0
V
V
V
nA
μ
A
nA
50
50
50
I
EBO
Emitter Cutoff Current
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 50 mA, V
CE
= 5.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
80
80
30
250
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.15
0.20
1.0
1.0
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
= 10 mA, V
CE
= 10 V,
f = 100 MHz
V
= 10 V, I
E
= 0,
f = 1.0 MHz
V
BE
= 0.5 V, I
C
= 0,
f = 1.0 MHz
I
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 250
μ
A, V
CE
= 5.0 V,
R
S
=1.0 k
, f=10 Hz to 15.7 kHz
100
300
MHz
C
obo
Output Capacitance
6.0
pF
C
ibo
Input Capacitance
20
pF
h
fe
Small-Signal Current Gain
50
250
NF
Noise Figure
8.0
dB
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p
Itf=50m Vtf=5 Xtf=8 Rb=10)
NPN General Purpose Amplifier
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5551TA | NPN General Purpose Amplifier |
| 2N55551ZL1 | Amplifier Transistors |
| 2N5555 | N-Channel Depletion JFET Switching(N溝道耗盡型結(jié)型場效應(yīng)管開關(guān)) |
| 2N5555 | CASE 29.04, STYLE 5 TO-92 (TO-226AA) |
| 2N5567 | BIDIRECTIONAL TRIODE THYRISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5551 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5551,116 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5551,412 | 功能描述:TRANSISTOR NPN 160V 300MA TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2N5551 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN TO-92 |
| 2N5551_10 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
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