參數(shù)資料
型號: 2N55551ZL1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: Amplifier Transistors
中文描述: 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: CASE 29-11, TO-226AA, 3 PIN
文件頁數(shù): 1/6頁
文件大小: 71K
代理商: 2N55551ZL1
Semiconductor Components Industries, LLC, 2004
June, 2004 Rev. 3
1
Publication Order Number:
2N5550/D
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
PbFree Packages are Available*
Device Marking: Device Type, e.g., 2N5550, Date Code
MAXIMUM RATINGS
Rating
Symbol
2N5550
2N5551
Unit
Collector Emitter Voltage
V
CEO
140
160
Vdc
Collector Base Voltage
V
CBO
160
180
Vdc
Emitter Base Voltage
V
EBO
6.0
Vdc
Collector Current Continuous
I
C
600
mAdc
Total Device Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoAmbient
R
JA
200
°
C/W
Thermal Resistance,
JunctiontoCase
R
JC
83.3
°
C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
TO92
CASE 29
STYLE 1
123
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
55xx
Y
WW
Specific Device Code
= Year
= Work Week
MARKING
DIAGRAM
2N
55xx
YWW
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