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參數(shù)資料
| 型號(hào)： | 2N5745 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP Silicon High-Power Transistor(80V（集電極-發(fā)射極）硅PNP大功率晶體管) |
| 中文描述： | 20 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 2N5745 |
2N4398 2N4399 2N5745
http://onsemi.com
3
**ON Semiconductor Guarantees this Data in Addition to JEDEC Registered Data.
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
OFF CHARACTERISTICS
(V
CE
= 80 Vdc, I
B
= 0)
Collector–Emitter Sustaining Voltage (1)
C
B
2N4398
2N4398, 2N4399
V
80
40
—
5.0
(V
CE
= 40 Vdc, I
B
= 0)
—
—
10
—
mAdc
5.0
mAdc
CE
BE(off)
C
I
EBO
(V
= 40 Vdc, V
= 1.5 Vdc)
CE
BE(off)
(V
CE
= 30 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150
°
C)
I
1.0
1.0
—
5.0
mAdc
CB
E
(V
CB
= 60 Vdc, I
E
= 0)
—
CBO
5.0
—
mAdc
Emitter Cutoff Current (V
EB
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
C
B
(I
C
= 10 Adc, V
CE
= 2.0 Vdc)
C
CE
(I
C
= 30 Adc, V
CE
= 4.0 Vdc)
FE
5.0
15
15
5.0
—
2.0
60
60
Collector–Emitter Saturation Voltage (1)
C
B
(I
C
= 15 Adc, I
B
= 1.5 Adc)
(I
C
= 20 Adc, I
B
= 4.0 Adc)
—
—
V
—
2.5
2.5
—
—
—
0.75
1.0
1.5
Vdc
(I
C
= 20 Adc, I
B
= 2.0 Adc)**
C
B
Base–Emitter Saturation Voltage (1)
C
B
V
BE(sat)
—
1.85
Base–Emitter On Voltage (1)
(I
= 15 Adc, V
= 2.0 Vdc)
(I
C
= 20 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
—
2.5
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2N5745X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
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| 2N5755 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|200V V(DRM)|2.5A I(T)RMS|TO-5 |
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