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參數(shù)資料
| 型號(hào)： | 2N4401 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | General Purpose NPN Silicon Transistor(40V（集電極-發(fā)射極）通用型硅NPN晶體管) |
| 中文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 126K |
| 代理商： | 2N4401 |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 2
1
Publication Order Number:
2N4401/D
2N4401
Preferred Device
General Purpose
Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
V
CEO
40
Vdc
Collector Base Voltage
V
CBO
60
Vdc
Emitter Base Voltage
V
EBO
6.0
Vdc
Collector Current Continuous
I
C
600
mAdc
Total Device Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
200
°
C/W
Thermal Resistance, JunctiontoCase
R
JC
83.3
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO92
CASE 29
STYLE 1
3
2
1
MARKING DIAGRAM
2N
4401
AYWW
2N4401
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
相關(guān)PDF資料 |
PDF描述 |
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| 2N4401 | NPN General Purpose Amplifier(NPN型通用放大器) |
| 2N4403G | General Purpose Transistors |
| 2N4403RA | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-92 |
| 2N4409 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 2N4410 | NPN Silicon Amplifer Transistor(80V（集電極-發(fā)射極）硅NPN放大器晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4401 BULK | 制造商:MCC 功能描述:General Purpose NPN Through Hole Transistor TO-92 |
| 2N4401 T/R | 功能描述:兩極晶體管 - BJT NPN SW 600MA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4401,116 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4401/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:General Purpose Transistors |
| 2N4401/D74Z | 制造商:Fairchild Semiconductor Corporation 功能描述:1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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