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參數(shù)資料
| 型號： | 2N4403G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistors |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 2N4403G |
Semiconductor Components Industries, LLC, 2004
June, 2004 Rev. 1
1
Publication Order Number:
2N4403/D
2N4403
Preferred Device
General Purpose
Transistors
PNP Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
V
CEO
40
Vdc
Collector Base Voltage
V
CBO
40
Vdc
Emitter Base Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
600
mAdc
Total Device Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoAmbient
R
JA
200
°
C/W
Thermal Resistance,
JunctiontoCase
R
JC
83.3
°
C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
TO92
CASE 29
STYLE 1
3
2
1
Y
WW
= Year
= Work Week
MARKING
DIAGRAM
2N
4403
YWW
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
Preferred
devices are recommended choices for future
use and best overall value.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4403RA | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-92 |
| 2N4409 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 2N4410 | NPN Silicon Amplifer Transistor(80V（集電極-發(fā)射極）硅NPN放大器晶體管) |
| 2N4410 | NPN General Purpose Amplifier(NPN型通用放大器) |
| 2N4441 | SILICON CONTROLLED RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4403G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| 2N4403L-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER |
| 2N4403L-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER |
| 2N4403NLBU | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4403RA | 功能描述:兩極晶體管 - BJT TO-92 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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