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參數(shù)資料
| 型號： | 2N6071 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 4 Ampere RMS Silicon Bidirectional Thyristor(4A（均方根值），200V，硅雙向晶閘管) |
| 中文描述： | 4安培有效值硅雙向晶閘管（第4A（均方根值）分別為200V，硅雙向晶閘管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 2N6071 |
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 7
1
Publication Order Number:
2N6071/D
2N6071A/B Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
Gate Triggering: 4 Mode 2N6071A, B; 2N6073A, B; 2N6075A, B
Blocking Voltages to 600 V
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., 2N6071A, Date Code
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MT1
G
MT2
http://onsemi.com
TRIACS
4.0 A RMS, 200 600 V
TO225
CASE 077
STYLE 5
1
2
3
REAR VIEW
SHOW TAB
x
y
Y
WW
G
= 1, 3, 5
= A, B
= Year
= Work Week
= PbFree Package
MARKING DIAGRAM
YWW
2N
607xyG
1. Cathode
2. Anode
3. Gate
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6072 | TRIAC|300V V(DRM)|4A I(T)RMS|TO-126 |
| 2N6072B | TRIAC|300V V(DRM)|4A I(T)RMS|TO-126 |
| 2N6074 | TRIAC|500V V(DRM)|4A I(T)RMS|TO-126 |
| 2N6074B | TRIAC|500V V(DRM)|4A I(T)RMS|TO-126 |
| 2N6073 | 4 Ampere RMS Silicon Bidirectional Thyristor(4A（均方根值），400V，硅雙向晶閘管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6071/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Sensitive Gate Triacs |
| 2N6071A | 功能描述:雙向可控硅 THY 4A 200V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6071A_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 2N6071AG | 功能描述:雙向可控硅 THY 4A 200V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6071AG | 制造商:ON Semiconductor 功能描述:Triac |
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