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參數(shù)資料
| 型號： | 2N6075A |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
| 中文描述： | 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225AA |
| 封裝： | FORMERLY TO-126, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 119K |
| 代理商： | 2N6075A |
2N6071A/B Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θ
JC
R
θ
JA
Max
3.5
Unit
°
C/W
*Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
75
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
TL
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25
°
C
TJ = 110
°
C
IDRM,
IRRM
—
—
—
—
10
2
μ
A
mA
ON CHARACTERISTICS
*Peak On-State Voltage(1)
(ITM =
6 A Peak)
VTM
—
—
2
Volts
*Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = –40
°
C)
All Quadrants
VGT
—
1.4
2.5
Volts
Gate Non–Trigger Voltage
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110
°
C)
All Quadrants
VGD
0.2
—
—
Volts
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current =
1 Adc)
(TJ = –40
°
C)
(TJ = 25
°
C)
IH
—
—
—
—
30
15
mA
Turn-On Time
(ITM = 14 Adc, IGT = 100 mAdc)
tgt
—
1.5
—
μ
s
QUADRANT
(Maximum Value)
Type
IGT
@
TJ
+25
°
C
I
mA
II
mA
III
mA
IV
mA
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc RL= 100 ohms)
(Main Terminal Voltage = 12 Vdc, RL = 100 ohms)
2N6071A
2N6073A
2N6075A
5
5
5
10
–40
°
C
20
20
20
30
2N6071B
2N6073B
2N6075B
+25
°
C
3
3
3
5
–40
°
C
15
15
15
20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ VDRM, TJ = 85
°
C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
dv/dt(c)
—
5
—
V/
μ
s
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6075B | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
| 2N6071 | 4 Ampere RMS Silicon Bidirectional Thyristor(4A（均方根值），200V，硅雙向晶閘管) |
| 2N6072 | TRIAC|300V V(DRM)|4A I(T)RMS|TO-126 |
| 2N6072B | TRIAC|300V V(DRM)|4A I(T)RMS|TO-126 |
| 2N6074 | TRIAC|500V V(DRM)|4A I(T)RMS|TO-126 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6075A | 制造商:ON Semiconductor 功能描述:TRIAC 4A 600V TO-126 |
| 2N6075AG | 功能描述:雙向可控硅 Sensitive Gate RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6075B | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6075BG | 功能描述:雙向可控硅 Sensitive Gate RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6076 | 功能描述:兩極晶體管 - BJT PNP 25V 10mA 500hfe RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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