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參數(shù)資料
| 型號： | 2N6292 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistor(7A，40W，70V（集電極-發(fā)射極），塑料，補(bǔ)償型硅NPN功率晶體管) |
| 中文描述： | 7 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2N6292 |
2N6107 2N6109 2N6111 2N6288 2N6292
http://onsemi.com
32
Figure 2. Switching Time Test Circuit
+11 V
25
μ
s
0
-9.0 V
R
B
-4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
MSD6100 USED BELOW I
B
≈
100 mA
B
≈
100 mA
R
B
and R
C
ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
2.0
0.07
Figure 3. Turn–On Time
I
C
, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.02
0.1
0.2
0.3
0.5
2.0
3.0
7.0
T
J
= 25
°
C
V
CC
= 30 V
I
C
/I
B
= 10
0.05
t
t
r
1.0
5.0
t
d
@ V
BE(off)
≈
5.0 V
0.03
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.7
0.01
0.01
0.5
0.2
0.1
0.07
0.05
0.02
r
0.05
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
θ
JC(t)
= r(t) R
θ
JC
R
θ
JC
= 3.125
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.3
0.03
0.02
0.1
0.5
0.2
15
10
1.0
Figure 5. Active–Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
7.0
5.0
2.0
0.15
5.0
10
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ T
C
= 25
°
C (SINGLE PULSE)
7.0
I
dc
0.1 ms
1.0
0.7
0.5
0.2
0.3
2.0
3.0
0.5 ms
20
30
50
70
100
3.0
0.1
ms
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6292 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR NPN 70V |
| 2N6292G | 功能描述:兩極晶體管 - BJT 7A 70V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6292MOT | 制造商:Motorola 功能描述:2N6292 S9G4A |
| 2N6293 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N6294 | 功能描述:兩極晶體管 - BJT Power Transistor Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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