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參數(shù)資料
| 型號： | 2N6491BD |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 23/61頁 |
| 文件大?。?/td> | 367K |
| 代理商： | 2N6491BD |
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2N6487 2N6488 2N6490 2N6491
3–134
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
θJC (t) = r(t) RθJC
R
θJC = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
20
Figure 5. Active–Region Safe Operating Area
2.0
10
20
80
TJ = 150°C
0.2
5.0
0.5
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
40
1.0
0.1
dc
2.0
60
4.0
2N6487, 2N6490
2N6488, 2N6491
CURVES APPLY BELOW RATED VCEO
5.0 ms
1.0 ms
500
s
100
s
I C
,COLLECT
OR
CURRENT
(AMP)
There are two limitations on the power handling ability of a
transistors average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown
C,
CAP
ACIT
ANCE
(pF)
300
VR, REVERSE VOLTAGE (VOLTS)
1.0
2.0
5.0
20
10
200
100
70
50
Cib
Cob
50
0.5
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
t,TIME
(ns)
0.2
5.0
1.0
2.0
20
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
0.5
tf
5000
100
200
1000
500
50
NPN
PNP
10
Figure 7. Capacitances
Cob
NPN
PNP
700
1000
TJ = 25°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6491G | 功能描述:兩極晶體管 - BJT 15A 80V 75W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6492 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6493 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6494 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2N6495 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 2PIN TO-66 - Bulk |
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