參數(shù)資料
型號: 2N6519RLRA
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AA, 3 PIN
文件頁數(shù): 34/37頁
文件大?。?/td> 430K
代理商: 2N6519RLRA
NPN 2N6515 2N6517 PNP 2N6519 2N6520
2–74
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 9. Switching Time Test Circuit
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
10 k
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
t, TIME (ms)
Figure 10. Thermal Response
500
200
100
50
20
10
5.0
2.0
1.0
0.5
I C
,COLLECT
OR
CURRENT
(mA)
0.5
1.0
2.0
5.0
10
20
50 100
200
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 11. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PP
t1
1/f
DUTY CYCLE
+ t1 f +
t1
tP
PEAK PULSE POWER = PP
TA = 25°C
1.0 ms
10
s
TC = 25°C
100
s
100 ms
+10.8 V
–9.2 V
+VCC
2.2 k
20 k
50
SAMPLING SCOPE
1/2MSD7000
1.0 k
VCC ADJUSTED
FOR VCE(off) = 100 V
APPROXIMATELY
–1.35 V
(ADJUST FOR V(BE)off = 2.0 V)
PULSE WIDTH
≈ 100 s
tr, tf ≤ 5.0 ns
DUTY CYCLE
≤ 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
Z
θJC(t) = r(t) RθJC TJ(pk) – TC = P(pk) ZθJC(t)
Z
θJA(t) = r(t) RθJA TJ(pk) – TA = P(pk) ZθJA(t)
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25°C)
SECOND BREAKDOWN LIMIT
CURVES APPLY
BELOW RATED VCEO
2N6515
2N6519
2N6517, 2N6520
相關(guān)PDF資料
PDF描述
2N6519 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5221 600 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4058 50 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4971 600 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6519TA 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N6519TA_Q 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N651A 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述:
2N651AJ 制造商:Motorola Inc 功能描述:
2N651AJAN 制造商:Motorola Inc 功能描述: