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參數(shù)資料
| 型號(hào)： | 2N6660-G |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 410 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 433K |
| 代理商： | 2N6660-G |
2
2N6660
Electrical Characteristics (T
A = 25°C unless otherwise specied)
Sym
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
Drain-to-source breakdown voltage
60
-
V
GS = 0V, ID = 10A
V
GS(th)
Gate threshold voltage
0.8
-
2.0
V
GS = VDS, ID = 1.0mA
ΔV
GS(th)
V
GS(th) change with temperature
-
-3.8
-5.5
mV/OCV
GS = VDS, ID = 1.0mA
I
GSS
Gate body leakage current
-
100
nA
V
GS = ±20V, VDS = 0V
I
DSS
Zero Gate voltage drain current
--
10
A
V
GS = 0V, VDS = Max rating
-
500
V
DS = 0.8 Max Rating,
V
GS = 0V, TA = 125
OC
I
D(ON)
On-state drain current
1.5
-
A
V
GS = 10V, VDS = 10V
R
DS(ON)
Static drain-to-source on-state
resistance
-
5.0
Ω
V
GS = 5.0V, ID = 0.3A
--
3.0
V
GS = 10V, ID = 1.0A
G
FS
Forward transconductance
170
-
mmho
V
DS = 25V, ID = 0.5A
C
ISS
Input capacitance
-
50
pF
V
GS = 0V,
V
DS = 24V,
f = 1.0MHz
C
OSS
Common source output capacitance
-
40
C
RSS
Reverse transfer capacitance
-
10
t
(ON)
Turn-on time
-
10
ns
V
DD = 25V, ID = 1.0A,
R
GEN = 25
t
(OFF)
Turn-off time
-
10
V
SD
Diode forward voltage drop
-
1.2
-
V
GS = 0V, ISD = 1.0A
t
rr
Reverse recovery time
-
350
-
ns
V
GS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
Package
I
D
(continuous)
(mA)
I
D
(pulsed)
(A)
Power Dissipation
@T
C = 25
OC
(W)
θ
jc
(OC/W)
θ
ja
(OC/W)
I
DR
(mA)
I
DRM
(A)
TO-39
410
3.0
6.25
20
125
410
3.0
I
D (continuous) is limited by max rated TJ.
90%
10%
90%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
OUTPUT
10V
V
DD
RGEN
0V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6660JANTX | 制造商:Vishay Semiconductors 功能描述: |
| 2N6660JANTXV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60 V (D-S) MOSFET |
| 2N6660JTVP02 | 制造商:Vishay Siliconix 功能描述:19500/547 JANTXV2N6660P WITH PIND |
| 2N6660JTX02 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 0.99A 3PIN TO-205AD - Bulk 制造商:Vishay Intertechnologies 功能描述:2N6660 Series N-Channel 60 V 3 Ohm Through Hole HEXFET Power Mosfet - TO-205AD |
| 2N6660JTXL02 | 制造商:Vishay Siliconix 功能描述:19500/547 JANTX2N6660 W/SOLDER DIP |
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