參數(shù)資料
型號(hào)： 2N7000
廠(chǎng)商： ELAN Microelctronics Corp .
英文描述： N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,開(kāi)態(tài)漏極電流75mA，N溝道增強(qiáng)型垂直DMOS場(chǎng)效應(yīng)管)
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS（擊穿電壓60V的，開(kāi)態(tài)漏極電流七十五毫安，?溝道增強(qiáng)型垂直的DMOS場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 30K
代理商： 2N7000
7-6
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
60
V
I
D
= 10
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
15V, V
DS
= 0V
V
GS
= 0V, V
DS
= 48V
V
GS
= 0V, V
DS
= 48V
T
A
= 125
°
C
V
GS
= 4.5V, V
DS
= 10V
V
GS
= 4.5V, I
D
= 75mA
V
GS
= 10V, I
D
= 0.5A
V
DS
= 10V, I
D
= 0.2A
Gate Threshold Voltage
0.8
3.0
V
Gate Body Leakage
10
nA
Zero Gate Voltage Drain Current
1
μ
A
1
mA
I
D(ON)
R
DS(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
ON-State Drain Current
75
mA
Static Drain-to-Source ON-State Resistance
5.3
Static Drain-to-Source ON-State Resistance
5.0
Forward Transconductance
100
m
Input Capacitance
60
Common Source Output Capacitance
25
pF
Reverse Transfer Capacitance
5
Turn-ON Time
10
V
DD
= 15V, I
D
= 0.5A,
R
GEN
= 25
I
SD
= 0.2A, V
GS
= 0V
Turn-OFF Time
10
Diode Forward Voltage Drop
0.85
V
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
2N7000
Thermal Characteristics
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
ns
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
*
I
D
(continuous) is limited by max rated T
j
.
200mA
500mA
200mA
500mA
相關(guān)PDF資料
PDF描述
2N7002-G N-Channel Enhancement-Mode Vertical DMOS FETs
2N7002BKM 60 V, 450 mA N-channel Trench MOSFET
2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET
2N7002BKT 60 V, 290 mA N-channel Trench MOSFET
2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N-7000 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2N7000 AMO 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000,126 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92
2N7000/D 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts
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