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參數(shù)資料
| 型號： | 2N7000RLRE |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/33頁 |
| 文件大?。?/td> | 310K |
| 代理商： | 2N7000RLRE |
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4–3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TMOS FET Transistor
N–Channel — Enhancement
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 s)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
Continuous
Pulsed
ID
IDM
200
500
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
350
2.8
mW
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
θJA
357
°C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16
″ from case
for 10 seconds
TL
300
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 Adc)
V(BR)DSS
60
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
IDSS
—
1.0
Adc
mAdc
Gate–Body Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0)
IGSSF
—
–10
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
3.0
Vdc
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
rDS(on)
—
5.0
6.0
Ohm
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
VDS(on)
—
2.5
0.45
Vdc
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
1
2
3
2N7000
Motorola Preferred Device
3 DRAIN
2
GATE
1 SOURCE
REV 3
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7000RLRM | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRMG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRP | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRPG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 200MA I(D) | TO-92VAR |
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