參數(shù)資料
型號(hào)： 2N7000RLRE
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： PLASTIC, TO-226AA, 3 PIN
文件頁(yè)數(shù)： 9/33頁(yè)
文件大?。?/td> 310K
代理商： 2N7000RLRE
Package Outline Dimensions
8–4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE OUTLINE DIMENSIONS (continued)
CASE 318–08
(TO–236AB) SOT–23
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
NOTES:
1.
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.
CONTROLLING DIMENSION: INCH.
3.
MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE–ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE–ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
PLASTIC
S
G
H
D
C
B
L
A
1
3
2
J
K
DIM
A
MIN
MAX
MIN
MAX
INCHES
2.70
3.10
0.1063
0.1220
MILLIMETERS
B
1.30
1.70
0.0512
0.0669
C
1.00
1.30
0.0394
0.0511
D
0.35
0.50
0.0138
0.0196
G
1.70
2.10
0.0670
0.0826
H
0.013
0.100
0.0005
0.0040
J
0.09
0.18
0.0034
0.0070
K
0.20
0.60
0.0079
0.0236
L
1.25
1.65
0.0493
0.0649
S
2.50
3.00
0.0985
0.1181
NOTES:
1.
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.
CONTROLLING DIMENSION: MILLIMETER.
CASE 318D–04
SC–59
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 2:
PIN 1. N.C.
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. N.C.
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
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參數(shù)描述
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2N7000RLRMG 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000RLRP 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000RLRPG 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 200MA I(D) | TO-92VAR
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