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參數(shù)資料
| 型號： | 2N7000RLRE |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 19/33頁 |
| 文件大小： | 310K |
| 代理商： | 2N7000RLRE |
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9–15
Reliability and Quality Assurance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
RELIABILITY STRESS TESTS
The following are brief descriptions of the reliability tests
commonly used in the reliability monitoring program. Not all of
the tests listed are performed by each product division. Other
tests may be performed when appropriate.
AUTOCLAVE (aka, PRESSURE COOKER)
Autoclave is an environmental test which measures device
resistance to moisture penetration and the resultant effect of
galvanic corrosion. Autoclave is a highly accelerated and
destructive test.
Typical Test Conditions: TA = 121°C, rh = 100%, p = 1
atmosphere (15 psig), t = 24 to 96 hours
Common Failure Modes: Parametric shifts, high leak-
age and/or catastrophic
Common Failure Mechanisms: Die corrosion or con-
taminants such as foreign material on or within the pack-
age materials. Poor package sealing.
HIGH HUMIDITY HIGH TEMPERATURE
BIAS (H3TB, H3TRB, or THB)
This is an environmental test designed to measure the
moisture resistance of plastic encapsulated devices. A bias is
applied to create an electrolytic cell necessary to accelerate
corrosion of the die metallization. With time, this is a
catastrophically destructive test.
Typical Test Conditions: TA = 85°C to 95°C, rh = 85%
to 95%, Bias = 80% to 100% of Data Book max. rating, t
= 96 to 1750 hours
Common Failure Modes: Parametric shifts, high leak-
age and/or catastrophic
Common Failure Mechanisms: Die corrosion or con-
taminants such as foreign material on or within the pack-
age materials. Poor package sealing.
HIGH TEMPERATURE GATE BIAS (HTGB)
This test is designed to electrically stress the gate oxide under
a bias condition at high temperature.
Typical Test Conditions: TA = 150°C, Bias = 80% of
Data Book max. rating, t = 120 to 1000 hours
Common Failure Modes: Parametric shifts in gate leak-
age and gate threshold voltage
Common Failure Mechanisms: Random oxide defects
and ionic contamination
Military Reference: MIL–STD–750, Method 1042
HIGH TEMPERATURE REVERSE BIAS
(HTRB)
The purpose of this test is to align mobile ions by means of
temperature and voltage stress to form a high–current
leakage path between two or more junctions.
Typical Test Conditions: TA = 85°C to 150°C, Bias =
80% to 100% of Data Book max. rating, t = 120 to 1000
hours
Common Failure Modes: Parametric shifts in leakage
and gain
Common Failure Mechanisms: Ionic contamination on
the surface or under the metallization of the die
Military Reference: MIL–STD–750, Method 1039
HIGH TEMPERATURE STORAGE LIFE
(HTSL)
High temperature storage life testing is performed to
accelerate failure mechanisms which are thermally activated
through the application of extreme temperatures
Typical Test Conditions: TA = 70°C to 200°C, no bias, t
= 24 to 2500 hours
Common Failure Modes: Parametric shifts in leakage
and gain
Common Failure Mechanisms: Bulk die and diffusion
defects
Military Reference: MIL–STD–750, Method 1032
INTERMITTENT OPERATING LIFE (IOL)
The purpose of this test is the same as SSOL in addition to
checking the integrity of both wire and die bonds by means of
thermal stressing
Typical Test Conditions: TA = 25°C, Pd = Data Book
maximum rating, Ton = Toff = D of 50°C to 100°C, t = 42
to 30000 cycles
Common Failure Modes: Parametric shifts and cata-
strophic
Common Failure Mechanisms: Foreign material, crack
and bulk die defects, metallization, wire and die bond
defects
Military Reference: MIL–STD–750, Method 1037
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7000RLRM | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRMG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRP | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000RLRPG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 200MA I(D) | TO-92VAR |
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