參數(shù)資料
型號: 2N7002/T1
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 3/11頁
文件大?。?/td> 87K
代理商: 2N7002/T1
Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 28 April 2006
Document number: 2N7002_6
Published in The Netherlands
Philips Semiconductors
2N7002
N-channel TrenchMOS FET
14. Contents
相關(guān)PDF資料
PDF描述
2N7002K 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002KT/R13 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002T/R 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002/T3 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002-T 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002-T1-E3 功能描述:MOSFET 60V 0.115A 0.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET N TO-236
2N7002-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
2N7002-T1-ER 制造商:Vishay Intertechnologies 功能描述:SOT23 NCH MOSFET 60V 7.5R
2N7002-T1-GE3 功能描述:MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube