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參數(shù)資料
| 型號： | 2N7002/T1 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2N7002/T1 |
2N7002_6
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 28 April 2006
7 of 11
Philips Semiconductors
2N7002
N-channel TrenchMOS FET
ID = 0.25 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Tj =25 °C and 150 °C; VGS =0V
VGS = 0 V; f = 1 MHz
Fig 11. Source current as a function of source-drain
voltage; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aab101
0
1
2
3
-60
0
60
120
180
Tj (°C)
VGS(th)
(V)
min
typ
max
003aab100
10
-6
10
-5
10
-4
10
-3
0123
VGS (V)
ID
(A)
min
typ
max
003aab356
0
0.2
0.4
0.6
0.8
1
0.2
0.4
0.6
0.8
1
VSD (V)
IS
(A)
Tj = 25 °C
150
°C
003aab357
1
10
2
10
-1
1
10
2
VDS (V)
C
(pF)
Ciss
Crss
Coss
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| 2N7002K | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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| 2N7002/T3 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002-T1-E3 | 功能描述:MOSFET 60V 0.115A 0.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET N TO-236 |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N7002-T1-ER | 制造商:Vishay Intertechnologies 功能描述:SOT23 NCH MOSFET 60V 7.5R |
| 2N7002-T1-GE3 | 功能描述:MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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