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參數(shù)資料
| 型號： | 2N7002D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 746K |
| 代理商： | 2N7002D87Z |
November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
T
A = 25°C unless otherwise noted
Symbol
Parameter
2N7000
2N7002
NDS7002A
Units
V
DSS
Drain-Source Voltage
60
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
GSS
Gate-Source Voltage - Continuous
±20
V
- Non Repetitive (tp < 50s)
±40
I
D
Maximum Drain Current - Continuous
200
115
280
mA
- Pulsed
500
800
1500
P
D
Maximum Power Dissipation
400
200
300
mW
Derated above 25
oC
3.2
1.6
2.4
mW/°C
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
-65 to 150
°C
T
L
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
312.5
625
417
°C/W
2N7000.SAM Rev. A1
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
High density cell design for low R
DS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
S
D
G
S
G
D
TO-92
1997 Fairchild Semiconductor Corporation
2N7000
(TO-236AB)
2N7002/NDS7002A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002-D87Z | 功能描述:MOSFET N-CH 60V 0.115A SOT23 制造商:on semiconductor 系列:- 包裝:剪切帶（CT） 零件狀態(tài):Digi-Key 停止供應(yīng) FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時）:115mA（Ta） 驅(qū)動電壓（最大 Rds On，最小 Rds On）:5V，10V 不同 Id 時的 Vgs（th）（最大值）:2.5V @ 250μA Vgs（最大值）:±20V 不同 Vds 時的輸入電容（Ciss）（最大值）:50pF @ 25V FET 功能:- 功率耗散（最大值）:200mW（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:7.5 歐姆 @ 500mA，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:SOT-23（TO-236AB） 封裝/外殼:TO-236-3，SC-59，SOT-23-3 基本零件編號:2N7002 標準包裝:1 |
| 2N7002DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
| 2N7002DSPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:Dual N-Channel Enhancement MOS FET |
| 2N7002DW | 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002DW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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