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參數(shù)資料
| 型號： | 2N7002DCSM-JQR-A |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CERAMIC, LCC2, 6 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 17K |
| 代理商： | 2N7002DCSM-JQR-A |
2N7002DCSM
* Pulse width limited by maximum junction temperature.
DUAL N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
V(BR)DSS = 60V
RDS(ON) = 7.5
ID = 0.115A
VDS
Drain – Source Voltage
VGS
Gate – Source Voltage
ID
Drain Current
IDM
Pulsed Drain Current *
PD
Power Dissipation
Derate Above
25°C
Tj
Operating Junction Temperature Range
Tstg
Storage Temperature Range
R θJA
Thermal Resistance, Junction to Ambient
60V
±40V
±0.115A
0.8A
200mW
400mW
1.60mW/
°C
2.0mW/
°C
–55 to 150°C
625
°C/W
250
°C/W
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
CERAMIC
LCC2 PACKAGE
(underside view)
1
2
6
3
4
5
2.54
±
0.13
(0.10
±
0.005)
0.64
±
0.06
(0.025
±
0.003)
0.23
(0.009)
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
rad.
A
1.27 ± 0.13
(0.05 ± 0.005)
A =
6.22 ± 0.13
(0.245 ± 0.005)
4.32
±
0.13
(0.170
±
0.005)
PAD 1 - Drain 1
PAD 2 - Gate 1
PAD 3 - Gate 2
PAD 4 - Drain 2
PAD 5 - Source 2
PAD 6 - Source 1
PER SIDE
TOTAL DEVICE
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 6171
Issue 1
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相關代理商/技術參數(shù) |
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|---|---|
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| 2N7002DW H6327 | 功能描述:MOSFET 2N-CH 60V 0.3A SOT363 RoHS:是 類別:分離式半導體產品 >> FET - 陣列 系列:OptiMOS™ 產品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| 2N7002DW L6327 | 功能描述:MOSFET N-KANAL SML SIG MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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