- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33295 > 2N7002DWT/R7 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2N7002DWT/R7 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-6 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 171K |
| 代理商： | 2N7002DWT/R7 |
PAGE . 1
REV.0.0-AUG.4.2008
2N7002DW
FEATURES
R
DS(ON), VGS@10V,IDS@500mA=5
R
DS(ON), VGS@4.5V,IDS@75mA=7.5
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: SOT-363 Package
Terminals : Solderable per MIL-STD-750,Method 2026
Marking : 702
60V N-Channel Enhancement Mode MOSFET
Maximum RATINGS and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
R
E
T
E
M
A
R
A
Pl
o
b
m
y
St
i
m
i
Ls
t
i
n
U
e
g
a
t
l
o
V
e
c
r
u
o
S
-
n
i
a
r
DV
S
D
0
6V
e
g
a
t
l
o
V
e
c
r
u
o
S
-
e
t
a
GV
S
G
+ 0
2V
t
n
e
r
u
C
n
i
a
r
D
s
u
o
u
n
i
t
n
o
CI
D
5
1
1A
m
t
n
e
r
u
C
n
i
a
r
D
d
e
s
l
u
P
)
1
I
M
D
0
8A
m
n
o
i
t
a
p
i
s
i
D
r
e
w
o
P
m
u
m
i
x
a
M
T
A
5
2
=
O C
T
A
5
7
=
O C
P
D
0
2
0
2
1
W
m
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
d
n
a
n
o
i
t
c
n
u
J
g
n
i
t
a
r
e
p
O
e
g
n
a
R
T
J T
,
G
T
S
0
5
1
+
o
t
5
-
O C
)
d
e
t
n
u
o
m
B
C
P
(
e
c
n
a
t
s
i
s
e
R
l
a
m
r
e
h
T
t
n
e
i
b
m
A
o
t
-
n
o
i
t
c
n
u
J
2
Rθ
A
J
5
2
6
O
W
/
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7002E-E3 | 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2N7002FN3T/R | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002H6327 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002KT3G | 320 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 2N7002K | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002E | 功能描述:MOSFET 60V 240mA 0.5W 3.0ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002E,215 | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002E_10 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002E_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23 |
| 2N7002E215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 385MA 3-SOT-23 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。