型號: | 2N7002E-E3 |
廠商: | VISHAY SILICONIX |
元件分類: | 小信號晶體管 |
英文描述: | 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
封裝: | TO-236, 3 PIN |
文件頁數(shù): | 4/4頁 |
文件大小: | 102K |
代理商: | 2N7002E-E3 |
相關PDF資料 |
PDF描述 |
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2N7002FN3T/R | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
2N7002H6327 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
2N7002KT3G | 320 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
2N7002K | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
2N7002K | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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2N7002ELT1 | 制造商:WILLAS 制造商全稱:WILLAS 功能描述:310 mAmps, 60 Volts |
2N7002EPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
2N7002ESEPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
2N7002ESPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
2N7002E-T1 | 功能描述:MOSFET 60V 0.24A T&R RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |