參數(shù)資料
型號(hào): 2N7002E-T1-GE3
廠商: VISHAY SILICONIX
元件分類: 小信號(hào)晶體管
英文描述: 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 174K
代理商: 2N7002E-T1-GE3
Document Number: 91000
www.vishay.com
Revision: 11-Mar-11
1
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相關(guān)PDF資料
PDF描述
2N7002FT/R 475 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002G-AL6-R 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002G-AL3-R 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002KTB 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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2N7002F 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.475A SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:475mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes
2N7002F,215 功能描述:MOSFET N-CH TRNCH 60V .475A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002F215 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 475MA 3-SOT-23
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