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參數(shù)資料
| 型號： | 2N7002K-T1-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 210K |
| 代理商： | 2N7002K-T1-E3 |
www.vishay.com
2
Document Number: 71333
S09-0857-Rev. E, 18-May-09
Vishay Siliconix
2N7002K
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
≤ 300 s duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Limits
Unit
Min.
Typ.a
Max.
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 10 A
60
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 A
12.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 10
A
VDS = 0 V, VGS = ± 15 V
1
VDS = 0 V, VGS = ± 10 V
± 150
nA
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
± 1000
VDS = 0 V, VGS = ± 5 V
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
A
VDS = 60 V, VGS = 0 V , TJ = 125 °C
500
On-State Drain Currenta
ID(on)
VGS = 10 V, VDS = 7.5 V
800
mA
VGS = 4.5 V, VDS = 10 V
500
Drain-Source On-Resistancea
RDS(on)
VGS = 10 V, ID = 500 mA
2
Ω
VGS = 4.5 V, ID = 200 mA
4
Forward Transconductancea
gfs
VDS = 10 V, ID = 200 mA
100
mS
Diode Forward Voltage
VSD
IS = 200 mA, VGS = 0 V
1.3
V
Dynamica
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V
ID 250 mA
0.4
0.6
nC
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V
f = 1 MHz
30
pF
Output Capacitance
Coss
6
Reverse Transfer Capacitance
Crss
2.5
Switchinga, b, c
Turn-On Time
td(on)
VDD = 30 V, RL = 150 Ω
ID 200 mA, VGEN = 10 V, RG = 10 Ω
25
ns
Turn-Off Time
td(off)
35
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| 2N7002KT1G | 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 60V 380mA SOT-23 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET, 60V, 380mA SOT-23 |
| 2N7002K-T1-GE3 | 功能描述:MOSFET 60V 300mA 0.35W 2.0ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002KT3G | 功能描述:MOSFET SMALL SIGNAL MOSFET 60V 380mA SINGL CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002KTB | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
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