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參數資料
| 型號： | 2N7002KT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 320 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | LEAD FREE, CASE 318-08, TO-236, 3 PIN |
| 文件頁數： | 2/5頁 |
| 文件大小： | 98K |
| 代理商： | 2N7002KT3G |
2N7002K
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
71
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
1
mA
TJ = 125°C
500
VGS = 0 V,
VDS = 50 V
TJ = 25°C
100
nA
GatetoSource Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
±10
mA
VDS = 0 V, VGS = ±10 V
450
nA
VDS = 0 V, VGS = ±5.0 V
150
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.0
2.5
V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
4.0
mV/°C
DraintoSource On Resistance
RDS(on)
VGS = 10 V, ID = 500 mA
1.19
1.6
W
VGS = 4.5 V, ID = 200 mA
1.33
2.5
Forward Transconductance
gFS
VDS = 5 V, ID = 200 mA
80
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz,
VDS = 20 V
24.5
pF
Output Capacitance
COSS
4.2
Reverse Transfer Capacitance
CRSS
2.2
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
0.7
nC
Threshold Gate Charge
QG(TH)
0.1
GatetoSource Charge
QGS
0.3
GatetoDrain Charge
QGD
0.1
TurnOn Delay Time
td(ON)
VGS = 10 V, VDD = 25 V,
ID = 500 mA, RG = 25 W
12.2
ns
Rise Time
tr
9.0
TurnOff Delay Time
td(OFF)
55.8
Fall Time
tf
29
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 200 mA
TJ = 25°C
0.8
1.2
V
TJ = 85°C
0.7
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N7002KTB | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002KTB6 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002K-TP | 功能描述:MOSFET 350mW, 60V, 340mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002KU | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N Channel MOSFET |
| 2N7002KW | 功能描述:MOSFET NCHAN Enhance MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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