參數(shù)資料
型號： 2N7002KT3G
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： 320 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： LEAD FREE, CASE 318-08, TO-236, 3 PIN
文件頁數(shù)： 3/5頁
文件大?。?/td> 98K
代理商： 2N7002KT3G
2N7002K
http://onsemi.com
3
TYPICAL CHARACTERISTICS
5.0 V
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
VDS, DRAINTOSOURCE VOLTAGE (V)
VGS, GATETOSOURCE VOLTAGE (V)
6
4
2
0
0.4
0.8
1.2
1.6
6
4
2
0
0.4
0.8
1.2
Figure 3. OnResistance vs. Drain Current and
Temperature
Figure 4. OnResistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.4
0.8
1.2
1.6
2.0
3.2
Figure 5. OnResistance vs. GatetoSource
Voltage
Figure 6. OnResistance Variation with
Temperature
VGS, GATETOSOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
10
8
6
4
2
0.4
0.8
1.6
2.4
125
100
75
50
25
0
25
50
0.6
1.0
1.4
1.8
2.2
I D
,DRAIN
CURRENT
(A)
I D
,DRAIN
CURRENT
(A)
R
DS(on)
,DRAIN
TO
SOURCE
RESIST
ANCE
(W
)
R
DS(on)
,DRAIN
TO
SOURCE
RESIST
ANCE
(W
)
R
DS(on)
,DRAIN
TO
SOURCE
RESIST
ANCE
(NORMALIZED)
VGS = 10 V
7.0 V
8.0 V
9.0 V
4.5 V
4.0 V
6.0 V
3.5 V
3.0 V
2.5 V
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
VGS = 4.5 V
ID, DRAIN CURRENT (A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.8
1.6
2.4
3.2
R
DS(on)
,DRAIN
TO
SOURCE
RESIST
ANCE
(W
)
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
VGS = 10 V
ID = 500 mA
ID = 200 mA
150
ID = 0.2 A
VGS = 4.5 V
VGS = 10 V
1.2
2.0
2.4
2.8
0.4
1.2
2.0
2.8
相關(guān)PDF資料
PDF描述
2N7002K 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002K 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
2N7002L6327 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002LT1H 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
2N7002LT3H 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
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