參數(shù)資料
型號: 2N7002PT
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 60 V, 310 mA N-channel Trench MOSFET
中文描述: 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, SC-75, 3 PIN
文件頁數(shù): 3/16頁
文件大小: 306K
代理商: 2N7002PT
2N7002PT
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 2 July 2010
3 of 16
NXP Semiconductors
2N7002PT
60 V, 310 mA N-channel Trench MOSFET
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
P
tot
total power dissipation
T
amb
= 25
C
[2]
-
250
300
770
150
+150
+150
mW
mW
mW
C
C
C
[1]
-
T
sp
= 25
C
-
T
j
T
amb
T
stg
Source-drain diode
I
S
junction temperature
ambient temperature
storage temperature
55
65
source current
T
amb
= 25
C
[1]
-
310
mA
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
Fig 1.
Normalized total power dissipation as a
function of ambient temperature
Fig 2.
Normalized continuous drain current as a
function of ambient temperature
T
amb
(
°
C)
75
175
125
25
75
25
017aaa001
40
80
120
P
der
(%)
0
T
amb
(
°
C)
75
175
125
25
75
25
017aaa002
40
80
120
I
der
(%)
0
P
der
P
P
tot 25
C
-----------------------
100
%
=
I
der
I
I
D 25
C
-------------------
100
%
=
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