參數(shù)資料
型號： 2N7002PT
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 60 V, 310 mA N-channel Trench MOSFET
中文描述： 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, SC-75, 3 PIN
文件頁數(shù)： 6/16頁
文件大?。?/td> 306K
代理商： 2N7002PT
2N7002PT
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 2 July 2010
6 of 16
NXP Semiconductors
2N7002PT
60 V, 310 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
T
j
= 25
C unless otherwise specified.
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
gate-source threshold
voltage
I
DSS
drain leakage current
[1]
Pulse test: t
p
300
s;
0.01.
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 10
A; V
GS
= 0 V
60
-
-
V
I
D
= 250
A; V
DS
= V
GS
1.1
1.75
2.4
V
V
DS
= 60 V; V
GS
= 0 V
T
j
= 25
C
T
j
= 150
C
V
GS
=
20 V; V
DS
= 0 V
-
-
-
-
-
-
1
10
100
A
A
nA
I
GSS
R
DSon
gate leakage current
drain-source on-state
resistance
[1]
V
GS
= 5 V; I
D
= 50 mA
V
GS
= 10 V; I
D
= 500 mA
V
DS
= 10 V; I
D
= 200 mA
-
-
1.3
1
400
2
1.6
-
mS
g
fs
forward
transconductance
[1]
-
Dynamic characteristics
Q
G(tot)
total gate charge
Q
GS
gate-source charge
Q
GD
gate-drain charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer
capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain voltage
I
D
= 300 mA;
V
DS
= 30 V;
V
GS
= 4.5 V
-
0.6
0.8
nC
-
-
-
-
-
0.2
0.2
30
7
4
-
-
50
-
-
nC
nC
pF
pF
pF
V
GS
= 0 V; V
DS
= 10 V;
f = 1 MHz
V
DD
= 50 V;
R
L
= 250
;
V
GS
= 10 V;
R
G
= 6
-
-
-
-
3
4
10
5
6
-
20
-
ns
ns
ns
ns
I
S
= 115 mA; V
GS
= 0 V
0.47
0.75
1.1
V
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2N7002PT115 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
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