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參數(shù)資料
| 型號： | 2N7007 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET |
| 中文描述： | 65 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | 2N7007 |
7-13
2N7007
Ordering Information
BV
DSS
/
BV
DGS
240V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-92
45
150mA
2N7007
Order Number / Package
N-Channel Enhancement-Mode
Vertical DMOS FET
Package Options
Note 1: See Package Outline section for dimensions.
Features
I
I
Free from secondary breakdown
I
I
Low power drive requirement
I
I
Ease of paralleling
I
I
Low C
ISS
and fast switching speeds
Excellent thermal stability
I
I
I
I
Integral Source-Drain diode
I
I
High input impedance and high gain
I
I
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
I
I
Motor controls
I
I
Converters
I
I
Amplifiers
I
I
Switches
I
I
Power supply circuits
I
I
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
30V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
TO-92
S G D
相關(guān)PDF資料 |
PDF描述 |
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| 2N7008-G | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N7008 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,開態(tài)漏極電流0.5A，N溝道增強(qiáng)型垂直DMOS場效應(yīng)管) |
| 2N7008 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N7012 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 1.3A I(D) | TO-250VAR |
| 2N7013 | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7008 | 功能描述:MOSFET 60V 7.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7008/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SMALL SIGNAL FIELD EFFECT TRANSISTOR |
| 2N7008_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N7008_D26Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7008-G | 功能描述:MOSFET 60V 7.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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