參數(shù)資料
型號(hào): 2PB709BRL
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 50 V, 200 mA PNP general-purpose transistors
中文描述: 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 3/13頁
文件大小: 302K
代理商: 2PB709BRL
2PB709BRL_2PB709BSL
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 28 June 2010
3 of 13
NXP Semiconductors
2PB709BRL; 2PB709BSL
50 V, 200 mA PNP general-purpose transistors
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
P
tot
T
j
T
amb
T
stg
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
25
°
C
[1]
-
250
150
+150
+150
mW
°
C
°
C
°
C
-
55
65
FR4 PCB, standard footprint
Fig 1.
Power derating curve
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
T
amb
(
°
C)
75
175
125
25
75
25
006aaa990
100
200
300
P
tot
(mW)
0
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
Conditions
in free air
Min
Typ
-
Max
500
Unit
K/W
[1]
-
R
th(j-sp)
-
-
140
K/W
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2PB709BRL,215 功能描述:兩極晶體管 - BJT PNP -50 V -200 mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PB709BSL 制造商:NXP Semiconductors 功能描述:TRANSISTORPNP50V0.2ASOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,PNP,50V,0.2A,SOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,PNP,50V,0.2A,SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:250mW; DC Collector Current:-200mA; DC Current Gain hFE:290; No. of Pins:3 ;RoHS Compliant: Yes
2PB709BSL,215 功能描述:兩極晶體管 - BJT PNP -50 V -200 mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PB710 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-236VAR
2PB710A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose transistor